How to Construct a 3D Dirac Semimetal by Stacking 2D Massless Dirac Fermion Layers
© The Physical Society of Japan
This article is on
Three-Dimensional Topological Semimetal/Insulator States in α-Type Organic Conductors with Interlayer Spin-Orbit Interaction
J. Phys. Soc. Jpn.
93,
123703
(2024)
.
Interlayer spin–orbit coupling originating from the anion potential gives rise to a 3D Dirac semimetal state that preserves inversion symmetry in the multilayer organic massless Dirac fermion system α-(ET)2I3.
Dirac and Weyl semimetals are three-dimensional (3D) topological semimetals in which the conduction and valence bands touch at nodal points with a linear dispersion in the 3D Brillouin zone (BZ). They exhibit characteristic magnetotransport phenomena, negative longitudinal magnetoresistance and a planar Hall effect, resulting from the chiral anomaly. Recently, a layered organic conductor, α-(ET)2I3, exhibited these phenomena at low temperatures, indicating that it is a 3D Dirac or Weyl semimetal. However, it is well established that each ET layer of α-(ET)2I3 is a two-dimensional (2D) massless Dirac fermion system, where the conduction and valence bands touch at two nodes in the 2D BZ. Therefore, the question is whether and how 3D Dirac or Weyl semimetals can be formed by stacking 2D massless Dirac fermion layers.
Because the α-(ET)2I3 crystal has space inversion symmetry (SIS) and time reversal symmetry (TRS), the stacking must preserve these symmetries. Under SIS and TRS, the Weyl semimetal is never allowed, but the Dirac semimetal can be allowed because the total Berry curvature of the spin-degenerate bands is cancelled out. However, when simple interlayer hopping is introduced into the electronic structure model without breaking the SIS and TRS, the system usually becomes a 3D nodal-line semimetal, where 2D nodal points form nodal lines along the stacking direction in the 3D BZ. To realize a Dirac semimetal, we must consider spin–orbit coupling (SOC) in interlayer hopping. In the α-(ET)2I3 crystal, the ET conduction layer and the I3− anion layer are alternately stacked. Electrons hopping from one ET layer to the neighboring ET layer must penetrate the I3− layer, and the I3− configuration is unsymmetrical around some hopping paths. In fact, the I3− ion is located on one side of the interlayer hopping path between the A (or A’) sites of the neighboring layers and imposes a strong potential gradient on the hopping electrons, resulting in SOC. Note that SOC is relatively strong in interlayer hopping; however, it is generally considered weak in the ET layers because the ET molecule consists of light atoms. This interlayer SOC reflecting the I3− configuration opens a gap along the nodal line in the interlayer kz-dispersion, leaving two Dirac points at kz = 0 and π/c. Therefore, the interlayer SOC arising from the anion potential can realize the Dirac semimetal state while maintaining the SIS and TRS. If the SIS is broken by the introduction of interlayer hopping, each band exhibits zero-field spin splitting, and the Weyl semimetal state, where spin degeneracy is lifted, arises instead of the Dirac semimetal state.
(Written by Toshihito Osada on behalf of the authors)
Three-Dimensional Topological Semimetal/Insulator States in α-Type Organic Conductors with Interlayer Spin-Orbit Interaction
J. Phys. Soc. Jpn.
93,
123703
(2024)
.
Share this topic
Fields
Related Articles
-
Unlocking Secrets of Novel Charge-Orbital States in Transition-Metal Compounds
Cross-disciplinary physics and related areas of science and technology
Electron states in condensed matter
Electronic structure and electrical properties of surfaces and nanostructures
Magnetic properties in condensed matter
Structure and mechanical and thermal properties in condensed matter
2025-1-6
A new Special Topics edition of the Journal of the Physical Society of Japan features articles exploring special transition-metal compounds that exhibit novel charge-orbital states.
-
The Stiffness of Electronic Nematicity
Dielectric, optical, and other properties in condensed matter
Electronic structure and electrical properties of surfaces and nanostructures
Electronic transport in condensed matter
2024-11-21
Using laser-excited photoelectron emission microscope (laser-PEEM) we found that the nematic stiffness in iron-based superconductors significantly increases as the systems become strange metals, suggesting that spin–orbital fluctuations enhance the stiffness of electronic nematicity.
-
Fermi Machine — Quantum Many-Body Solver Derived from Mapping between Noninteracting and Strongly Correlated Fermions
Electron states in condensed matter
Measurement, instrumentation, and techniques
2024-10-29
Strongly interacting quantum many-body states can be mapped to noninteracting quantum states, enabling a new quantum neural network called the Fermi machine to solve strongly correlated electron problems.
-
Pressure-Tuned Classical–Quantum Crossover in Magnetic Field-Induced Quantum Phase Transitions of a Triangular-Lattice Antiferromagnet
Cross-disciplinary physics and related areas of science and technology
Electron states in condensed matter
Magnetic properties in condensed matter
2024-9-5
The correspondence principle states that as quantum numbers approach infinity, the nature of a system described by quantum mechanics should match that described by classical mechanics. Quantum phenomena, such as quantum superposition and quantum correlation, generally become unobservable when a system approaches this regime. Conversely, as quantum numbers decrease, classical descriptions give way to observable quantum effects. The external approach to classical–quantum crossover has attracted research interest. This study aims to demonstrate a method for achieving such control in materials.
-
Antiferromagnetism Induces Dissipationless Transverse Conductivity
Electronic structure and electrical properties of surfaces and nanostructures
Electronic transport in condensed matter
Magnetic properties in condensed matter
2024-7-24
An investigation using high-quality NbMnP crystals demonstrates that the anomalous Hall conductivity arising from antiferromagnetism is dissipationless, as expected from the intrinsic mechanism.